Transient Radiation Screening of Silicon Devices Using Backside Laser Irradiation
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1809-1815
- https://doi.org/10.1109/TNS.1982.4336452
Abstract
Transient nuclear radiation responses of integrated circuits can be simulated by irradiating the backside of the silicon die with a pulsed infrared laser. This technique facilitates the implementation of an effective, low cost, nondestructive, 100 percent transient radiation screen at wafer probe. Analytic predictions are shown to correlate closely with experimental results on an operational amplifier and its test cell components.Keywords
This publication has 2 references indexed in Scilit:
- Use of a Pulsed Laser as an Aid to Transient Upset Testing of I2L LSI MicrocircuitsIEEE Transactions on Nuclear Science, 1978
- The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and CircuitsIEEE Transactions on Nuclear Science, 1965