High-mobility gallium arsenide grown by liquid-phase epitaxy
- 1 January 1968
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 1 (1) , 115-116
- https://doi.org/10.1088/0022-3727/1/1/416
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Photoluminescence and solution growth of gallium arsenideSolid-State Electronics, 1966