Diffusion Coefficient of Iron in Silicon at Room Temperature
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8R) , 1542-1543
- https://doi.org/10.1143/jjap.27.1542
Abstract
The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression D Fe=3.3×10-1 exp(-0.81/k T)cm2s-1.Keywords
This publication has 5 references indexed in Scilit:
- Point Defects in Semiconductors IIPublished by Springer Nature ,1983
- Transition metals in siliconApplied Physics A, 1983
- Interstitial iron and iron-acceptor pairs in siliconApplied Physics A, 1982
- The Properties of Iron in SiliconJournal of the Electrochemical Society, 1981
- The solution of iron in siliconJournal of Applied Physics, 1980