Electron-Spin-Resonance Experiments on Antimony-Doped Germanium
- 9 December 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 152 (2) , 850-857
- https://doi.org/10.1103/physrev.152.850
Abstract
Electron-spin-resonance experiments on shallow donors in germanium are reported. The experiments consist of measurement of the Zeeman effect of the donors as a function of applied uniaxial compression. From the data, a value may be derived for the ratio of the valley-orbit splitting of the donor ground state () to the deformation potential for shear (). The results for phosphorus donors agree with determinations by other workers. The result for antimony donors is . Using the value eV leads to a valley-orbit splitting of eV. This result lies between the values obtained from piezoresistance and spectroscopic measurements. The data require that the singlet state lie below the triplet in antimony donors, just as in phosphorus and arsenic donors. An additional four-line spin-resonance spectrum in antimony-doped germanium is ascribed to donors located near the surface of the samples, in regions of high local strain.
Keywords
This publication has 11 references indexed in Scilit:
- Electron Spin Resonance Experiments on Shallow Donors in GermaniumPhysical Review B, 1964
- Additional Spin Resonance Spectrum in Antimony-Doped GermaniumPhysical Review Letters, 1960
- Valley-Orbit Splitting of Antimony in GermaniumPhysical Review B, 1960
- New Electron Spin Resonance Spectrum in Antimony-Doped GermaniumPhysical Review Letters, 1960
- Simple Transistor Marginal Oscillator for Magnetic ResonanceReview of Scientific Instruments, 1960
- Factor of Electrons in GermaniumPhysical Review Letters, 1959
- Piezoresistance of-Type GermaniumPhysical Review B, 1959
- Electron Spin Resonance Experiments on Shallow Donors in GermaniumPhysical Review Letters, 1959
- Determination of Crystal Orientation by High Intensity ReflectogramsJournal of the Electrochemical Society, 1959
- Theory of Transport Effects in Semiconductors: ThermoelectricityPhysical Review B, 1956