Low to high injections in double-diffused transistors
- 1 November 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (11) , 940-941
- https://doi.org/10.1109/t-ed.1968.16539
Abstract
It is shown, in this correspondence, that the operation of most double-diffused transistors at all injection levels is equivalent to that of alloy devices with the effective doubling of the diffusion constant. Moreover, the base transit time of a double-diffused transistor exhibiting a fixed basewidth is nearly current-independent.Keywords
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