ERRATUM: “The Distribution of A-C Resistance in Oxide Films on Aluminum,” [J. Electrochem. Soc., 110, 1210 (1963)]
Open Access
- 1 January 1964
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 111 (1) , 123-1339
- https://doi.org/10.1149/1.2426049
Abstract
Conductance of tantalum and niobium films at room temperature is considered as a function of the forming potential of the anodic oxidation process. From elementary principles an equation is derived to relate metal film conductance to formation voltage. The equation indicates a linear relationship, and experimental measurements generally verify the linearity. Deviations of the characteristic from linear behavior are interpreted in terms of film sample and deposition parameters. Theoretical and experimental results suggest that the conductance‐formation potential characteristic provides a fundamental tool for studying metal and oxide film parameters.Keywords
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