Epitaxial growth of diamond thin films on cubic boron nitride surfaces

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Abstract
Diacuond thin filnis can be grown epitaxially on cubic born nitride (c-BN) surfaces using DC plasilia cheniical vapor desposition. As a substrate of this experinient, high pressure synthesized c-BN particles (2OO---5OOuni in diatueter) are used. At the early growth stage of the dianiond filuis on c—BN lll} , {lOO} and i22l} surfces, it is found that the growth wanner of the films is nucleation—growth type showing the island density of about 1011 cm 2• The coalescence of the growing island is also found by SEM observation and the continuous filn is formed at the film thick of 2000A and l,uni for the substrate surfaces of {lll} and {lOO} respectively. The epitaxial re1ations on typical c-BN surfaces such as till] and lOO} are {ll1} , (110) diaiuond 1/ Cll1} , (110) c—BN {lOO} , (110) diauiond /1 1OO} , (110) c—BN. The (100) epitaxial growth of diamond on C221} of c-BN is also observed. This is interpreted by twinning introduced in the diaciond filtns during crystal growth.

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