A new method for the two-dimensional calculation of the potential distribution in a buried-channel charge-coupled device: Theory and experimental verification
- 1 March 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (3) , 313-321
- https://doi.org/10.1109/T-ED.1981.20334
Abstract
This paper describes a new method for calculating the potential distribution in the depleted top layer and in the substrate of a buried-channel charge-coupled (BCCD) device. The depletion approximation is used. The experimental verification of the method is done by comparing the results with measured values for the maximum channel potential ΦMAX, the location Ymof that maximum, and the locationHof the edge of the p-n depletion layer into the substrate.Keywords
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