Excitons as intermediate states in spin-flip Raman scattering of electrons bound to donors inCd1−xMnxTe epilayers
- 15 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (8) , 5217-5224
- https://doi.org/10.1103/physrevb.48.5217
Abstract
The resonance behavior of the spin-flip Raman scattering in semimagnetic Te epilayers has been used to investigate the scattering process itself as well as to identify the state of the carrier that changes its spin. The characteristic variation of the Stokes shift with magnetic field, a magnetic polaron effect for vanishing magnetic field, and the independence of the scattering efficiency of laser power indicate that a donor-bound electron changes its spin orientation. According to magnetic dipole selection rules for the spin-flip scattering of electrons, the Raman signal shows resonances with excitonic transitions involving the =±1/2 hole states as they can be characterized by luminescence and photoluminescence excitation spectroscopy. The pronounced resonance behavior allows a very accurate comparison of the resonance energy of the spin-flip Raman scattering with the energetic position of the corresponding free exciton peak in the photoluminescence excitation spectrum. We therefrom conclude that a donor-bound exciton plays the role of the intermediate state in this scattering process.
Keywords
This publication has 24 references indexed in Scilit:
- Raman spectroscopy in Cd1−xFexS: Iron energy levels and spin-flip Raman scatteringSolid State Communications, 1992
- Anticrossing of Raman lines in Se: Van Vleck–type bound magnetic polaronPhysical Review Letters, 1989
- Resonant raman scattering on low energy excited states of Fe++ in Cd1-xFexSeSolid State Communications, 1989
- Nonmagnetic ground state ofin CdSe: Absence of bound magnetic polaronPhysical Review Letters, 1988
- Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and SuperlatticesPhysica Status Solidi (b), 1988
- Spin-flip Raman scattering from epilayers and modulation-doped superlattices grown by photoassisted molecular-beam epitaxyPhysical Review B, 1987
- Spin-flip Raman scattering inn-type diluted magnetic semiconductorsPhysical Review B, 1985
- Spin-flip Raman scattering, bound magnetic polaron, and fluctuations in (Cd,Mn)SePhysical Review B, 1983
- Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1−xMnxTeSolid State Communications, 1982
- Exchange-Induced Spin-Flip Raman Scattering in a Semimagnetic SemiconductorPhysical Review Letters, 1981