Dependence of luminescence decays from GaAs/electrolyte contacts on excitation power and applied bias: Examination of the modified dead layer model
- 15 February 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (4) , 1912-1917
- https://doi.org/10.1063/1.353180
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Photoluminescence enhancement monitored in real time during photowashing of GaAsApplied Physics Letters, 1991
- Picosecond time-resolved luminescence study of n-cadmium selenide single crystals: comparison with cadmium sulfideThe Journal of Physical Chemistry, 1991
- Dynamic aspects of semiconductor photoelectrochemistryChemical Reviews, 1990
- Photoluminescence at a semiconductor-electrolyte contact around and beyond the flat-band potentialThe Journal of Physical Chemistry, 1990
- Photoluminescence as an In‐Situ Technique to Determine Solid State and Surface Properties of Semiconductors in an Electrochemical Cell — Application of the “Dead Layer Model”Berichte der Bunsengesellschaft für physikalische Chemie, 1989
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Determination of bulk minority-carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi-infinite semiconductor slabJournal of Applied Physics, 1986
- Photoluminescent properties of n-GaAs electrodes: Applications of the dead-layer model to photoelectrochemical cellsJournal of Applied Physics, 1983
- Bias-dependent photoluminescence intensities in n-InP Schottky diodesJournal of Applied Physics, 1980
- Stable Semiconductor Liquid Junction Cell with 9 Percent Solar-to-Electrical Conversion EfficiencyScience, 1977