Analysis of Trapping and Recombination Effects in Photoelectrochemical Processes at Semiconductor Electrodes: Investigations at n‐GaAs
- 1 April 1985
- journal article
- research article
- Published by Wiley in Berichte der Bunsengesellschaft für physikalische Chemie
- Vol. 89 (4) , 385-392
- https://doi.org/10.1002/bbpc.19850890407
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The Minority Carrier Recombination Resistance: A Useful Concept in Semiconductor ElectrochemistryJournal of the Electrochemical Society, 1985
- Hole Injection and Electroluminescence of n ‐ GaAs in the Presence of Aqueous Redox ElectrolytesJournal of the Electrochemical Society, 1983
- The n-gallium arsenide electrolyte interface: evidence for specificity in lattice ion-electrolyte interactions, dependence for interfacial potential drops on crystal plane orientation to the electrolyte and implications for solar energy conversionThe Journal of Physical Chemistry, 1983
- Surface and Redox Reactions at GaAs in Various ElectrolytesJournal of the Electrochemical Society, 1983
- Processes at Semiconductor ElectrodesPublished by Springer Nature ,1983
- The Influence of Surface Recombination and Trapping on the Cathodic Photocurrent at p‐Type III‐V ElectrodesJournal of the Electrochemical Society, 1982
- Investigation of photoelectrochemical corrosion of semiconductors. 1The Journal of Physical Chemistry, 1980
- Solar energy conversion by photoelectrochemical processesElectrochimica Acta, 1980
- Light‐Intensity Dependence In The Kinetics Of N‐Gap Photoelectrode StabilizationBulletin des Sociétés Chimiques Belges, 1980
- Zum Mechanismus der Auflösung von Galliumarsenid durch OxydationsmittelZeitschrift für Physikalische Chemie, 1969