Gas-phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane
- 15 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (2) , 1062-1075
- https://doi.org/10.1063/1.345792
Abstract
A gas-phase reaction mechanism is proposed for the chemical vapor deposition (CVD) of amorphous silicon from silane or disilane at atmospheric pressure. The gas stream in the CVD reactor is populated by silanes, silylenes, and disilenes in a variety of sizes. Silylenes form by the decomposition of silanes, and they rapidly insert into other silanes to form larger silanes. Although silylenes are expected to stick to growth surfaces to which they diffuse, they are too reactive in the gas phase to deliver a large flux onto the growth surface. Larger silylenes (SiH3SiH and larger) also isomerize to form less reactive disilenes, which we propose to be principally responsible for film growth. Film profiles observed in depositions from silane and disilane are presented, and computed film profiles are compared to these observations. Deposition from silane is explained quite well by the mechanism, as are some qualitative features of deposition from disilane.This publication has 50 references indexed in Scilit:
- A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous OxideJournal of the Electrochemical Society, 1989
- Evaluated Kinetic and Photochemical Data for Atmospheric Chemistry: Supplement III. IUPAC Subcommittee on Gas Kinetic Data Evaluation for Atmospheric ChemistryJournal of Physical and Chemical Reference Data, 1989
- Mechanistic Studies of Chemical Vapor DepositionAnnual Review of Physical Chemistry, 1987
- Molecular and electronic structure of Si3H6Journal of the American Chemical Society, 1987
- The decomposition kinetics of disilane and the heat of formation of silyleneInternational Journal of Chemical Kinetics, 1987
- Reaction of silicon ion (2P) with silane (SiH4, SiD4). Heats of formation of SiHn, SiHn+ (n = 1, 2, 3), and Si2Hn+ (n = 0, 1, 2, 3). Remarkable isotope exchange reaction involving four-hydrogen shiftsJournal of the American Chemical Society, 1987
- Silane pyrolysis rates for the modeling of chemical vapor depositionJournal of Applied Physics, 1987
- Mechanism and kinetics of the silane decomposition in the presence of acetylene and in the presence of olefinsInternational Journal of Chemical Kinetics, 1985
- Predictive possibilities of unimolecular rate theoryThe Journal of Physical Chemistry, 1979
- Kinetics of the thermal decomposition of methyldisilane and trisilaneJournal of the American Chemical Society, 1975