Selecting the band gap for best long-term performance of a-Si:H solar cells

Abstract
We calculate the light‐soaking time dependence of the a‐Si:H solar cell efficiency with a simple analytical model that expresses the efficiency as a function of the deep‐level defect density in the i‐layer. We use the model to predict the cell stability as a function of the optical gap of the i‐layer. The band gap for best long‐term performance lies in the vicinity of 1.6 eV.

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