Low-frequency noise sources in polysilicon emitter bipolar transistors: Influence of hot-electron-induced degradation

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Abstract
The noise properties of polysilicon emitter bipolar transistors are studied. The influences of the various chemical treatments and annealing temperatures, prior and after polysilicon deposition, on the noise magnitude are shown. The impact of hot‐electron‐induced degradation and post‐stress recovery on the base and collector current fluctuations are also investigated in order to determine the main noise sources of these devices.

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