X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 288-291
- https://doi.org/10.1016/0022-0248(89)90403-x
Abstract
No abstract availableKeywords
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