Light emitting porous silicon diode based on a silicon/porous silicon heterojunction
- 17 November 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (11) , 6474-6482
- https://doi.org/10.1063/1.371711
Abstract
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LED). It is based on a heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. This is thought to be due to a different injection mechanism for which carriers are injected directly into conduction band states. Anodic oxidation experiments show further improvements in the LED efficiency.This publication has 24 references indexed in Scilit:
- Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivationApplied Physics Letters, 1998
- Porous silicon n–p light emitting diodeThin Solid Films, 1997
- Fabrication of Single-Crystal Si Microstructures by AnodizationJapanese Journal of Applied Physics, 1996
- Silicon-based visible light-emitting devices integrated into microelectronic circuitsNature, 1996
- Electroluminescent porous silicon device with anexternal quantum efficiency greater than 0.1% under CW operationElectronics Letters, 1995
- High quantum efficiency for a porous silicon light emitting diode under pulsed operationApplied Physics Letters, 1995
- Spectroscopic investigation of electroluminescent porous siliconJournal of Applied Physics, 1994
- Nonlinear electrical transport in porous siliconPhysical Review B, 1994
- Porous silicon electroluminescent devicesJournal of Luminescence, 1993
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992