Strained layer InGaAs channel negative-resistance field-effect transistor
- 1 January 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (1) , 378-380
- https://doi.org/10.1063/1.342552
Abstract
We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.This publication has 12 references indexed in Scilit:
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