Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: II . Autodoping
- 1 August 1986
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 133 (8) , 1697-1701
- https://doi.org/10.1149/1.2108996
Abstract
Vertical and lateral autodoping in low temperature silicon epitaxial films deposited by very low pressure chemical vapor deposition with and without plasma enhancement were investigated. Intrinsic films deposited on substrates heavily doped with antimony, arsenic, phosphorus, or boron have extremely abrupt dopant profiles as determined by SIMS and spreading resistance analysis. A simple model that attempts to explain these results is discussed.Keywords
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