ZnSe for mirror passivation of high power GaAs basedlasers
- 15 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (17) , 1595-1596
- https://doi.org/10.1049/el:19961062
Abstract
The authors report a method for passivating vacuum cleaved facets of high power GaAs based lasers using a thin film of ZnSe formed by molecular beam deposition for preventing facet degradation, and thus for improving their long term stability and reliability at high power operation. ZnSe has a large bandgap of 2.7 eV and a lattice constant close to that of GaAs with a lattice mismatch of only 0.23%. ZnSe evaporates congruently at a comparatively low temperature of ~750°C from an effusion cell, and deposits as stoichiometric ZnSe film. The authors have used the technique for 980 nm InGaAs/InGaP/GaAs lasers.Keywords
This publication has 4 references indexed in Scilit:
- High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on FacetsJapanese Journal of Applied Physics, 1993
- Improvement of catastrophic optical damage level of AlGaInP visible laser diodes by sulfur treatmentApplied Physics Letters, 1991
- Low-noise and high-power operation in high reflectivity coated nonabsorbing mirror GaAlAs lasersJournal of Applied Physics, 1990
- Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatmentPublished by SPIE-Intl Soc Optical Eng ,1990