Fabrication of thin silicon-on-insulator flims using laser recrystallisation

7 November 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (23) , 1102-1103
https://doi.org/10.1049/el:19850782

Abstract

The letter describes a technique to obtain thin (130 nm) silicon-on-insulator (SOI) films. A 550 nm-thick film of silicon is first deposited on an insulating oxide and recrystallised using an argon laser. Owing to the combined use of seeding windows and antireflection patterns, the recrystallised film is single-crystal. The SOI film is then planarised using thick resist spinning and plasma etch. Finally, the film thickness is reduced to 130 nm by thermal oxidation.

Keywords

SOI
THIN SI-ON-INSULATOR FILMS
ANTIREFLECTION PATTERNS
RECRYSTALLISED FILM
INSULATING OXIDE
WINDOWS
PLASMA ETCH
LASER RECRYSTALLISATION
THICK RESIST SPINNING
THERMAL OXIDATION
ARGON LASER
SOI FILM

This publication has 1 reference indexed in Scilit:

Grain Boundary Confinement in Soi Films Using Patterned Ar Coatings and Seeded Oscillatory Growth
MRS Proceedings, 1983