a-Si:H Schottky gate on n -GaInAs

14 August 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (17) , 896-898
https://doi.org/10.1049/el:19860611

Abstract

The metal Schottky contact leads to low barrier heights on small-gap (n-type GaInAs material matched to InP where this barrier does not exceed 0.3 eV. We have found an original method to improve this result considerably by using a deposition of an amorphous semiconductor a-Si or a-Si: H. A Pt metal acts as the Schottky contact on the amorphous layer. The device behaves like a heterostructure of a high-gap (amorphous layer: E_g˜1.8 eV) on a small-gap (GaInAs:0.75 eV) material. The Schottky-barrier height (0.8 eV) is greater than the GaInAs bandgap (0.75 eV). The reverse current is very low: 20 nA at 1 V reverse voltage for a 0.6 mm diode diameter. An FET using a-Si: H as a gate realised on a GaInAs layer shows a good electrical characteristic.

Keywords

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