Source-drain breakdown in an insulated gate, field-effect transistor

• 1 January 1973
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 160-163
• https://doi.org/10.1109/iedm.1973.188674

Abstract

Keywords

• TRANSISTOR
• FIELD EFFECT
• SOURCE DRAIN
• INSULATED GATE
• DRAIN BREAKDOWN