Concentration dependence of Ge segregation during the growth of a SiGe buried layer

• 1 July 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (4) , 1392-1395
• https://doi.org/10.1116/1.586947

Abstract

Keywords

• X RAY PHOTOELECTRON SPECTROSCOPY
• MATERIALS SCIENCE
• SURFACE LAYER
• PHOTOELECTRON SPECTROSCOPY
• ELECTRON DIFFRACTION
• CRYSTAL GROWTH