Photoluminescence of Ge-doped AlxGa1−xAs
- 1 May 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5) , 3586-3589
- https://doi.org/10.1063/1.329090
Abstract
The photoluminescence of Ge‐doped AlxGa1−xAs (with 0.26 < x < 0.43) has been investigated. For carrier concentrations ∼1017 cm−3 a new luminescence line is observed. An analysis based on the configurational coordinate model indicates that a complex center is involved. The center is believed to be a GeAs−VAs complex from which emission has also been observed in GaAs.This publication has 16 references indexed in Scilit:
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976
- Photoluminescence of AlxGa1−xAsJournal of Applied Physics, 1972
- Enhanced Indirect Optical Absorption in AlAs and GaPPhysical Review B, 1972
- Photoluminescence of GaxAl1-xAs Crystals Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1971
- Electroreflectance Spectra of AlxGa1−xAs AlloysCanadian Journal of Physics, 1971
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962