Fabrication of precision quantized Hall devices
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 46 (2) , 281-284
- https://doi.org/10.1109/19.571832
Abstract
Peer reviewed: NoNRC publication: YeKeywords
This publication has 6 references indexed in Scilit:
- Growth and characterization of high mobility two-dimensional electron gasesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEPIEEE Transactions on Instrumentation and Measurement, 1993
- The Quantum Hall Effect and Resistance StandardsMetrologia, 1992
- Characterization of AuGe / Ni / Au Contacts on GaAs / AlGaAs Heterostructures for Low‐Temperature ApplicationsJournal of the Electrochemical Society, 1991
- Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructuresIEEE Transactions on Instrumentation and Measurement, 1991
- Selection criteria for AlGaAs-GaAs heterostructures in view of their use as a quantum Hall resistance standardJournal of Applied Physics, 1989