Epitaxial Growth of Bi12SiO20 Films by Chemical Vapor Deposition
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L954
- https://doi.org/10.1143/jjap.24.l954
Abstract
The growth of Bi12SiO20 films on (111) Bi12SiO20 substrates has been attempted by chemical vapor deposition. With the source material combination of Bi metal and silicon alkoxide, transparent epitaxial films have been grown in the wide composition range of x=10.8–17.6, where x denotes the ratio of Bi to Si in the grown films.Keywords
This publication has 2 references indexed in Scilit:
- Electrical and Optical Properties of Bi12SiO20Journal of Applied Physics, 1971
- The growth and properties of piezoelectric bismuth germanium oxide Bi12GeO20Journal of Crystal Growth, 1967