Improved MBE Growth Of InGaAs-InAlAs Heterostructures For High-Performance Device Applications

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Abstract
In this paper, we report the improvements in structural quality of the InGaAs-InAlAs heterostructures grown on InP by molecular beam epitaxy (MBE). The effect of heteroepitaxial growth parameters on modulation-doped n-InAlAs/InGaAs-InP structures is examined by Hall measurement. Practical growth conditions have been developed for device fabrication. Low-temperature (4.2 K) magnetotransport measurement and resonant tunneling spectroscopy are used to characterize the modulation-doped structures and resonant tunneling barrier structures, respectively. Both measurements indicate the high quality of the heterostructures. Barrier height effect on resonant tunneling diode structures is discussed. InAlAs-InGaAs heterojunction bipolar transistors (HBTs) and high-electron-mobility transistors (HEMTs) have been successfully fabricated on InP in this work.

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