MÖSSBAUER AND CHANNELING STUDIES ON119Te,119Sb AND119Sn IMPLANTS IN GROUP-IV ELEMENTS
- 1 December 1974
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 35 (C6) , C6-297
- https://doi.org/10.1051/jphyscol:1974646
Abstract
The implantation behaviour of isotope-separator implanted Te, Sb, and Sn in single crystals of group-IV elements (diamond, silicon, and germanium) has been studied in Mössbauer experiments on the 24-keV transition of 119Sn and in complementing channeling experiments. Radioactive 119mSn (245 d), 119mTe (4.7 d), and 119Sb (38 h) was implanted at energies of 60 keV, doses of 1013-1017 atoms/cm2, and temperatures of 20-450 °C. Large substitutional fractions are identified for all implantations. The nature and possible position of a second site observed in some implantations is discussedKeywords
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