Transport in hydrogenated amorphous silicon p-i-n solar cells
- 1 April 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3350-3352
- https://doi.org/10.1063/1.331002
Abstract
Measurements of the voltage dependence of the photocurrent in hydrogenated amorphous silicon p‐i‐n solar cells are presented along with a simple physical model of the transport. For the conditions of weakly absorbed light, the photocurrent‐voltage curve can be completely specified by the light intensity and electron and hole drift lengths. Furthermore, the carrier with the longer drift length determines the solar cell current‐voltage curve.This publication has 12 references indexed in Scilit:
- Computer model of amorphous silicon solar cellJournal of Applied Physics, 1982
- On the carrier collection efficiency of amorphous silicon hydride Schottky barrier solar cells: Effects of recombinationJournal of Applied Physics, 1981
- Collection efficiency of low-mobility solar cellsApplied Physics Letters, 1981
- Effects of geminate recombination on the photovoltaic characteristics of a-Si:H Schottky barrier solar cellsApplied Physics Letters, 1980
- Nongeminate Recombination of-Si: HPhysical Review Letters, 1980
- Charge collection and spectral response of amorphous-silicon solar cellsApplied Physics Letters, 1980
- Field-dependent quantum efficiency in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Collection efficiency measurements on a-Si : H solar cellsJournal of Applied Physics, 1979
- Double Extraction of Uniformly Generated Electron-Hole Pairs from Insulators with Noninjecting ContactsJournal of Applied Physics, 1971
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952