Development of surface topology during ion sputtering of silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1) , 608-609
- https://doi.org/10.1016/0168-583x(87)90919-0
Abstract
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This publication has 1 reference indexed in Scilit:
- Accurate i n s i t u measurement of near-surface volume dilatation in irradiated silica through capacitance monitoring of cantilever deflectionReview of Scientific Instruments, 1983