Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures

Publisher Website

1 January 1991

journal article
Published by Springer Nature in MRS Proceedings

Vol. 220
https://doi.org/10.1557/proc-220-413

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs
Applied Physics Letters, 1989
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices
Physical Review Letters, 1985
Physics of Semiconductor Devices
Physics Today, 1970
Deformation Potentials and Mobilities in Non-Polar Crystals
Physical Review B, 1950