Comparison of Proton and Neutron Carrier Removal Rates
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1140-1146
- https://doi.org/10.1109/tns.1987.4337443
Abstract
Displacement damage induced carrier removal rates for proton irradiations in the energy range 10-175 MeV were compared to 1 MeV equivalent neutrons using power MOSFETs as a test vehicle. The results showed that, within experimental error, the degradation mechanisms were qualitatively similar and the ratio of proton to neutron carrier removal rates as a function of proton energy correlate with a calculation based on nonionization energy loss in silicon. For exposures under junction bias, p-type silicon was found to have a smaller carrier removal rate for both proton and neutron irradiations, whereas, for n-type silicon, junction bias had little effect on the carrier removal rate.Keywords
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