Lucky-drift mechanism for impact ionisation in semiconductors
- 20 June 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (17) , 3373-3388
- https://doi.org/10.1088/0022-3719/16/17/020
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Comment on ’’Simulation of high-field transport in GaAs using a Monte Carlo method and pseudopotential band structures’’ and on ’’Band-structure dependent transport and impact ionization in GaAs’’Journal of Applied Physics, 1982
- Band-structure-dependent transport and impact ionization in GaAsPhysical Review B, 1981
- Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approachSolid-State Electronics, 1979
- Picosecond spectroscopy of semiconductorsSolid-State Electronics, 1978
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Theory of electrical breakdown in ionic crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937
- Der elektrische Durchschlag in Gasen und festen IsolatorenPublished by Springer Nature ,1935
- Elektrische Festigkeit und KristallbauThe European Physical Journal A, 1932