Modal properties of unstable resonator semiconductor lasers with a lateral waveguide
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 445-447
- https://doi.org/10.1063/1.96141
Abstract
The modal properties of unstable resonator lasers with a lateral waveguide have been analyzed, and an unstable resonator semiconductor laser with a real index lateral waveguide has been demonstrated. Output powers in excess of 400 mW were observed with a stable, highly coherent lateral field distribution. The incorporation of a lateral real index waveguide with the unstable resonator configuration results in an increase in the external quantum efficiency and the appearance of ripples in the lateral field distribution.Keywords
This publication has 6 references indexed in Scilit:
- Coherence and focusing properties of unstable resonator semiconductor lasersApplied Physics Letters, 1985
- Unstable resonator cavity semiconductor lasersApplied Physics Letters, 1985
- Wide range wavelength tuning in 1.3 μm DBR-DC-PBH-LDs by current injection into the DBR regionElectronics Letters, 1985
- Etched-mirror unstable-resonator semiconductor lasersElectronics Letters, 1985
- Injection laser with an unstable resonatorSoviet Journal of Quantum Electronics, 1980
- Unstable Optical ResonatorsApplied Optics, 1974