Temperature effects in Schottky-barrier silicon solar cells

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Abstract
Experimental results are reported concerning temperature effects from 25 to 125 °C on Schottky‐barrier solar cells which were fabricated using a semitransparent Cu/Cr barrier metal layer on p‐type silicon. The open‐circuit voltage decreased by 2.3 mV/°C and the fill factor by 0.11%/°C, while the short‐circuit current increased slightly with increased temperature. These results are consistent with previous work on p‐n–junction silicon solar cells. The diode quality factor n was shown to decrease with increased temperature, as predicted by field emission theory. The room‐temperature photovoltaic output of cell 96 remained at 0.54 V, 25.4 mA/cm2, and 8.5–10.6% efficiency using 80–100‐mW/cm2 sunlight illumination after repeated temperature cycling.