Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6A) , L692-695
- https://doi.org/10.1143/jjap.31.l692
Abstract
Lasing properties in a ZnSe/ZnSSe multiple quantum well heterostructure were studied quantitatively at room temperature with photopumping. The internal optical absorption loss was measured in II-VI heterostructure for the first time and it remained at the low value of 9 cm-1. The internal quantum efficiency of about 40% and the differential quantum efficiency of 28% were estimated. The lasing peaks were red shifted by about 50 meV in comparison to photoluminescence peaks measured with low excitation, and the energy separation was almost independent of the temperature. The lasing mechanism was studied by measuring the temperature and excitation-level dependencies of the emission spectra.Keywords
This publication has 6 references indexed in Scilit:
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Extremely-low-threshold and high-temperature operation in a photopumped ZnSe/ZnSSe blue laserApplied Physics Letters, 1991
- Low threshold pulsed and continuous-wave laser action in optically pumped (Zn,Cd)Se/ZnSe multiple quantum well lasers in the blue-greenApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room TemperatureJapanese Journal of Applied Physics, 1991
- Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayersApplied Physics Letters, 1991