High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 197-200
https://doi.org/10.1109/bipol.2002.1042917

Abstract

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 μm SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F t /F max of 60/85 GHz with a 3.0 V BV CEO . In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs. Author(s) Feilchenfeld, N. IBM Microeletronics Div., Essex Junction, VT, USA Lanzerotti, L. ; Sheridan, D. ; Wuthrich, R. ; Geiss, P. ; Coolbaugh, D. ; Gray, P. ; He, J. ; Demag, P. ; Greco, J. ; Larsen, T. ; Patel, V. ; Zierak, M. ; Hodge, W. ; Rascoe, J. ; Trappasso, J. ; Orner, B. ; Norris, A. ; Hershberger, D. ; Voegeli, B. ; Voldman, S. ; Rassel, R. ; Ramachandrian, V. ; Gautsch, M. ; Eshun, E. ; Hussain, R. ; Jordan, D. ; St Onge, S. ; Dunn, J.

Keywords

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