Photo-enhanced chemical vapor deposition: System design considerations

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Abstract
ArF excimer laser-enhanced photochemical vapor deposition of Si from Si2H6 in an UHV deposition chamber has been used to achieve Si epitaxy at temperatures as low as 250 °C. The system design criteria are discussed. Modified Schimmel etching/Nomarski microscopy, transmission electron microscopy, and reflection high energy electron diffraction have been used to study the microstructure of Si films as a function of laser power, substrate temperature and disilane partial pressure. The growth rates were observed to be linearly dependent on laser intensity and Si2H6 partial pressure. The morphology of the films is excellent and defects such as dislocation loops and stacking faults are not seen.

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