We present the results of a study of the energy spectrum of the ground state for shallow donors in quantum well structures, consisting of a single slab of GaAs sandwiched between two semi- infinite layers of Ga1−xAlxAs. The effect of the position of the impurity atom within the central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are presented: One in which the impurity atom is located at the center of the quantum well (on- center impurity), the other in which the impurity atom is located at the edge of the quantum well (on-edge impurity). Both the on-center and the on-edge donor ground state are bound for all values of GaAs slab thicknesses and alloy compositions. The alloy composition x is varied between 0.1 and 0.4. In this composition range, Ga1−xAlxAs is direct and the single-valley effective mass theory is a valid technique for treating shallow donor states. Calculations are carried out in the case of finite potential barriers determined by realistic conduction band offsets.