Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers
- 24 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (5) , 550-552
- https://doi.org/10.1063/1.125851
Abstract
A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature.Keywords
This publication has 6 references indexed in Scilit:
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin filmsApplied Physics Letters, 1998
- Mg x Zn 1−x O as a II–VI widegap semiconductor alloyApplied Physics Letters, 1998
- Epitaxial Growth of ZnO Films on (0001) Sapphire at Low Temperatures by Electron Cyclotron Resonance-assisted Molecular Beam Epitaxy and Their Microstructural CharacterizationsJapanese Journal of Applied Physics, 1998
- Hartree-Fock study of phase changes in ZnO at high pressurePhysical Review B, 1993
- Very large optical nonlinearity of semiconductor microcrystallitesPhysical Review B, 1988