Ionization Rates for Holes and Electrons in Silicon
- 15 February 1957
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 105 (4) , 1246-1249
- https://doi.org/10.1103/physrev.105.1246
Abstract
The ionization rates for holes and electrons in silicon at high electric fields have been evaluated from data on the multiplication of reverse-biased junctions. In Si, electrons have a higher ionization rate than holes. The variation of ionization rate with field strength is in good agreement with theory.Keywords
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