Structures Grown by Molecular Beam Epitaxy
- 1 September 1973
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 10 (5) , 655-662
- https://doi.org/10.1116/1.1318408
Abstract
The process of molecular beam epitaxy is described, and its application to compound semiconductors is discussed. Growths and properties of GaAs and GaAs-GaAlAs superlattice are presented.Keywords
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