Electron trapping in amorphous SiO2 studied by charge buildup under electron bombardment

15 June 1985

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 57 (12) , 5139-5144
https://doi.org/10.1063/1.335247

Abstract

Electron bombardment of thick pure SiO₂ induces the buildup of a negative charge which can be observed through a ‘‘mirror’’ effect in a conventional Auger scanning microscope. A mechanism for the creation of this charge is proposed in terms of trapping of an electron in defects due to the irradiating beam. The influence of temperature is studied on amorphous and monocrystalline SiO₂. The temperature dependence of the existence of high negative charge shows around 270 °C an anomalous effect which depends on the irradiation time. The role of electronic excitation to produce defects in silica is discussed.

This publication has 24 references indexed in Scilit:

ODMR of recombination centres in crystalline quartz
Journal of Physics C: Solid State Physics, 1984
Creation of Quasistable Lattice Defects by Electronic Excitation in Si $O_{2}$
Physical Review Letters, 1983
Theory of defects in vitreous silicon dioxide
Physical Review B, 1983
New model of nuclear particle tracks in dielectric minerals
Physical Review B, 1981
$E^{'}$ center in glassy Si $O_{2}$ : ${}^{17}O$ , ${}^{1}H$ , and "very weak" ${}^{29}{Si}$ superhyperfine structure
Physical Review B, 1980
$E^{'}$ center in glassy Si $O_{2}$ : Microwave saturation properties and confirmation of the primary ${}^{29}{Si}$ hyperfine structure
Physical Review B, 1979
Fundamental Defect Centers in Glass: The Peroxy Radical in Irradiated, High-Purity, Fused Silica
Physical Review Letters, 1979
Calculation of the g‐tensor and ²⁹Si hyperfine tensors of the E′₁ centre in silicon dioxide
Physica Status Solidi (b), 1978
Electronic structure of ${E_{1}}^{'}$ centers in Si $O_{2}$
Physical Review B, 1975
Radiation Effects in Silica at Low Temperatures
Physical Review B, 1959