Surface recombination of nonequilibrium electron-hole plasma in laser-modified semiconductor-doped glasses
- 1 August 1993
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 87 (6) , 577-580
- https://doi.org/10.1016/0038-1098(93)90600-r
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Laser-induced irreversible change of the carrier-recombination process in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1990
- Photodarkening effects in semiconductor-doped glassesJournal of Applied Physics, 1989
- Intensity-dependent photoluminescence spectra of semiconductor-doped glassesApplied Physics Letters, 1988
- Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1988
- Semiconductor-doped glass ion-exchanged waveguidesApplied Physics Letters, 1986
- Interferometric measurement of the nonlinear index of refraction, n2, of CdSxSe1−x-doped glassesApplied Physics Letters, 1986
- Nanosecond optical pulse shaping in cadmium-sulfide-selenide glassesApplied Physics B Laser and Optics, 1985
- Ultrafast carrier and grating lifetimes in semiconductor-doped glassesApplied Physics Letters, 1985
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983
- GIANT-PULSE LASER AND LIGHT AMPLIFIER USING VARIABLE TRANSMISSION COEFFICIENT GLASSES AS LIGHT SWITCHESApplied Physics Letters, 1964