Reversible Passivation of Silicon Dangling Bonds with the Stable Radical TEMPO
- 11 September 2003
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 3 (10) , 1431-1435
- https://doi.org/10.1021/nl034258+
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Organometallic Chemistry on Silicon and Germanium SurfacesChemical Reviews, 2002
- Reactions of some [C, N, O]-containing molecules with Si surfaces: Experimental and theoretical studiesInternational Reviews in Physical Chemistry, 2002
- Olefin Additions on H−Si(111): Evidence for a Surface Chain Reaction Initiated at Isolated Dangling BondsLangmuir, 2001
- New Generation of Organosilyl Radicals by Photochemically Induced Homolytic Cleavage of Silicon−Boron BondsThe Journal of Organic Chemistry, 2000
- Current-induced organic molecule–silicon bond breaking: consequences for molecular devicesSurface Science, 2000
- CONTROLLED MOLECULAR ADSORPTION ON SILICON: Laying a Foundation for Molecular DevicesAnnual Review of Physical Chemistry, 1999
- Autoxidation of Poly(hydrosilane)sOrganometallics, 1998
- STM study of Si(111)1 × 1-H surfaces prepared by in situ hydrogen exposureSurface Science, 1994
- Role of bond-strain in the chemistry of hydrogen on the Si(100) surfaceSurface Science, 1992
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990