On binding to N in GaP
- 15 November 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 13 (10) , 1751-1753
- https://doi.org/10.1016/0038-1098(73)90281-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Calculations of impurity states in semiconductors: IJournal of Physics C: Solid State Physics, 1973
- The dielectric function in zincblende semiconductorsJournal of Physics C: Solid State Physics, 1971
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Interference between Intermediate States in the Optical Properties of Nitrogen-Doped Gallium PhosphidePhysical Review B, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966