SiO2 films deposited on Si by dual ion beams

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Abstract
Uniform SiO2films of 0.1∼1 μm thickness were deposited on Si substrates (5 in. in diameter) by dual ion beams (DIB) which consists of ionized cluster beams (ICB) and ionized gas beams (IGB). In the source of ICB, fine powder of SiO is vaporized to form a jet stream, which on being ejected from a multinozzle into a high vacuum chamber, is cooled and clustered by adiabatic expansion. The clusters thus obtained are partially ionized in an electron shower, accelerated, and made to bombard the Si substrate. On the other hand, in the source of IGB, O2 gas molecules ejected from a nozzle are partially ionized, excited in an electron shower, accelerated, and made to bombard the Si substrate too. These two beams collide and combine together on their way to the substrate or on its surface. The properties of the SiO2films formed by the DIB mainly varied with oxygen partial pressure, oxygen ion current density, and deposition rate; with an oxygen partial pressure of 6.7×10− 2 Pa, an oxygen ion current density of 6×10− 7 A/mm2, and a deposition rate of below 1200 Å/min at a substrate temperature of below 200 °C, the SiO2films obtained had an infrared spectrum peaking at 1060 cm− 1 with a half‐width at the half‐maximum of 80 cm− 1. It indicates that the DIB can produce at a very low temperature with a very high deposition rate almost the same quality SiO2films as those obtained by thermal oxidation. This is considered to be possible because of the existence of the ionized and exited gas molecules and the migration of ionized clusters onto the surface of the substrate.
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