Power and efficiency limits in single-mirror light emitting diodes with enhanced intensity

5 November 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (23) , 2169-2171
https://doi.org/10.1049/el:19921392

Abstract

The principle of enhanced emission intensity in a single-mirror light emitting diode (LED) is demonstrated by placing an InGaAs multiquantum-well active region in the antinode of the optical mode created by a nearby metallic mirror, thus enhancing emission along the optical axis by up to four times. Multiple-well LED structures exhibit enhanced efficiencies similar to that of a perfect isotropic emitter. The emission intensity of single-well LEDs is limited by band filling.

Keywords

LED STRUCTURES
SINGLE-MIRROR
EFFICIENCY LIMITS
MQW
AG MIRROR
INGAAS MULTIQUANTUM WELL ACTIVE REGION
ENHANCED EMISSION INTENSITY
LIGHT EMITTING DIODES
POWER LIMITS
AL5O12

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