Localization and delocalization of electrons in narrow-band semiconductors under the action of strong time-dependent and constant electric fields

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Abstract
Resonant electron processes in narrow-band semiconductors in strong time-dependent and constant electric fields are studied. Dynamic localization and resonant delocalization are observed in detail in the framework of quantum mechanics. Macroscopic manifestations of these phenomena are investigated in the framework of the Boltzmann equation. Resonant peaks in the dependence of dc current upon the parameters of electric field are analyzed. They result from the nonlinear Stark resonance and allow one to gain a substantial increase in dc conductivity of a semiconductor. Detailed and complete analysis of the interplay between the microscopic resonant processes and their macroscopic manifestations is presented. © 1996 The American Physical Society.