Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
- 26 October 2003
- journal article
- research article
- Published by Springer Nature in Nature Materials
- Vol. 2 (11) , 735-738
- https://doi.org/10.1038/nmat1003
Abstract
The synthesis of large single crystals of GaN (gallium nitride) is a matter of great importance in optoelectronic devices for blue-light-emitting diodes and lasers. Although high-quality bulk single crystals of GaN suitable for substrates are desired, the standard method of cooling its stoichiometric melt has been unsuccessful for GaN because it decomposes into Ga and N(2) at high temperatures before its melting point. Here we report that applying high pressure completely prevents the decomposition and allows the stoichiometric melting of GaN. At pressures above 6.0 GPa, congruent melting of GaN occurred at about 2,220 degrees C, and decreasing the temperature allowed the GaN melt to crystallize to the original structure, which was confirmed by in situ X-ray diffraction. Single crystals of GaN were formed by cooling the melt slowly under high pressures and were recovered at ambient conditions.Keywords
This publication has 11 references indexed in Scilit:
- High-pressure science with a multi-anvil apparatus at SPring-8Journal of Physics: Condensed Matter, 2002
- Growth of nitride crystals in a supercritical nitrogen fluid under high pressures and high temperatures yield using diamond anvil cell and YAG laser heatingJournal of Crystal Growth, 2000
- Growth of GaN Single Crystals under High Nitrogen Pressures and their CharacterizationCrystal Research and Technology, 1999
- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced LiftoffJapanese Journal of Applied Physics, 1999
- Morphology and characterization of GaN single crystals grown in a Na fluxJournal of Crystal Growth, 1998
- SPring-8 Beamlines for High Pressure Science with Multi-Anvil Apparatus.The Review of High Pressure Science and Technology, 1998
- Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressureJournal of Crystal Growth, 1997
- High pressure growth of GaN — new prospects for blue lasersJournal of Crystal Growth, 1996
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973